2007-04-20 BFP182 1 1 2 3 4 npn silicon rf transistor* ? for low noise, high-gain broadband amplifiers at collector currents from 1 ma to 20 ma ? f t = 8 ghz, f = 0.9 db at 900 mhz ? pb-free (rohs compliant) package 1) ? qualified according aec q101 * short term description esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type marking pin configuration package BFP182 rgs 1=c 2=e 3=b 4 = e - - sot143 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-emitter voltage v ces 20 collector-base voltage v cbo 20 emitter-base voltage v ebo 2 collector current i c 35 ma base current i b 4 total power dissipation 2) t s 69 c p tot 250 mw junction temperature t j 150 c ambient temperature t a -65 ... 150 storage temperature t st g -65 ... 150 thermal resistance parameter symbol value unit junction - soldering point 3) r thjs 325 k/w 1 pb-containing package may be available upon special request 2 t s is measured on the collector lead at the soldering point to the pcb 3 for calculation of r thja please refer to application note thermal resistance
2007-04-20 BFP182 2 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 12 - - v collector-emitter cutoff current v ce = 20 v, v be = 0 i ces - - 100 a collector-base cutoff current v cb = 10 v, i e = 0 i cbo - - 100 na emitter-base cutoff current v eb = 1 v, i c = 0 i ebo - - 1 a dc current gain- i c = 10 ma, v ce = 8 v, pulse measured h fe 70 100 140 -
2007-04-20 BFP182 3 electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics (verified by random sampling) transition frequency i c = 15 ma, v ce = 8 v, f = 500 mhz f t 6 8 - ghz collector-base capacitance v cb = 10 v, f = 1 mhz, v be = 0 , emitter grounded c cb - 0.25 0.4 pf collector emitter capacitance v ce = 10 v, f = 1 mhz, v be = 0 , base grounded c ce - 0.3 - emitter-base capacitance v eb = 0.5 v, f = 1 mhz, v cb = 0 , collector grounded c eb - 0.8 - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 900 mhz i c = 3 ma, v ce = 8 v, z s = z sopt , f = 1.8 ghz f - - 0.9 1.3 - - db power gain, maximum stable 1) i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 900 mhz g ms - 22 - db power gain, maximum available 2) i c = 10 ma, v ce = 8 v, z s = z sopt , z l = z lopt , f = 1.8 ghz g ma - 16.5 - db transducer gain i c = 10 ma, v ce = 8 v, z s = z l = 50 ? , f = 900 mhz i c = 10 ma, v ce = 8 v, z s = z l = 50 ? , f = 1.8 ghz | s 21e | 2 - - 18 12 - - db 1 g ms = | s 21 / s 12 | 2 g ma = | s 21e / s 12e | (k-(k2-1) 1/2 )
2007-04-20 BFP182 4 spice parameter (gummel-poon model, berkley-spice 2g.6 syntax): transistor chip data: is = 4.8499 fa vaf = 21.742 v ne = 0.91624 - var = 2.2595 v nc = 0.5641 - rbm = 2.8263 ? cje = 8.8619 ff tf = 22.72 ps itf = 6.5523 ma vjc = 1.0132 v tr = 1.7541 ns mjs = 0- xti = 3- bf = 84.113 - ikf = 0.14414 a br = 10.004 - ikr = 0.039478 a rb = 3.4217 ? re = 2.1858 - vje = 1.0378 v xtf = 0.43147 - ptf = 0 deg mjc = 0.31068 - cjs = 0 ff xtb = 0 - fc = 0.64175 nf = 0.56639 - ise = 8.4254 fa nr = 0.54818 - isc = 5.9438 fa irb = 0.071955 ma rc = 1.8159 ? mje = 0.40796 - vtf = 0.34608 v cjc = 490.25 ff xcjc = 0.19281 - vjs = 0.75 v eg = 1.11 ev tnom 300 k all parameters are ready to use, no scalling is necessary. extracted on behalf of infineon technologies ag by: institut fr mobil- und satellitentechnik (imst) package equivalent circuit: l bi = 0.89 nh l bo = 0.73 nh l ei = 0.4 nh l eo = 0.15 nh l ci = 0 nh l co = 0.42 nh c be = 189 ff c cb = 15 ff c c e = 187 ff eha07524 transistor c? l e? b? 3 4 c c chip e l 1 5 c b 2 l c 6 c 1 c 2 c 3 valid up to 6ghz for examples and ready to use parameters please contact your local infineon technologies distributor or sales office to obtain a infineon technologies cd-rom or see internet: http://www.infineon.com
2007-04-20 BFP182 5 total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot permissible pulse load r thjs = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load p totmax / p totdc = ? ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
2007-04-20 BFP182 6 package sot143 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel rf s 2005, june date code (ym) bfp181 type code 56 pin 1 0.8 0.8 1.2 0.9 1.1 0.9 1.2 0.8 0.8 0.8 -0.05 +0.1 1.9 1.7 0.1 2.9 +0.1 -0.05 0.4 0.1 max. 12 3 4 0.25 m b 0.1 1 10? max. 0.15 min. 0.2 a m 2.4 0.15 0.2 10? max. a 1.3 0.1 0...8? 0.08...0.15 2.6 4 3.15 pin 1 8 0.2 1.15 b manufacturer
2007-04-20 BFP182 7 edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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